Design of LDO circuit based on curvature compensation reference closed-loop stability
نویسندگان
چکیده
In this paper, a low dropout (LDO) circuit based on curvature compensation benchmark and closed-loop stability is designed. This compensates for the higher order term of VBE in BJT through subthreshold characteristic MOSFET achieves effect compensation. The bandgap reference provides stable input voltage LDO circuit, while source follower adaptive bias improve response speed circuit. temperature drift coefficient 8.11 ppm/°C, 3–5 V, output 2.8 linear adjustment rate 0.22%.
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2023
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0134622